(module Transistor_GaN_GS66516B (layer F.Cu) (tedit 5D9BA130)
  (fp_text reference REF** (at 0 5.5 180) (layer F.SilkS)
    (effects (font (size 1 1) (thickness 0.15)))
  )
  (fp_text value Transistor_GaN_GS66516B (at 0 -5.5) (layer F.Fab)
    (effects (font (size 1 1) (thickness 0.15)))
  )
  (fp_line (start 5.5 4.5) (end 5.5 0) (layer F.Fab) (width 0.12))
  (fp_line (start -5.5 4.5) (end 5.5 4.5) (layer F.Fab) (width 0.12))
  (fp_line (start -5.5 -4.5) (end -5.5 4.5) (layer F.Fab) (width 0.12))
  (fp_line (start 5.5 -4.5) (end -5.5 -4.5) (layer F.Fab) (width 0.12))
  (fp_line (start 5.5 0) (end 5.5 -4.5) (layer F.Fab) (width 0.12))
  (fp_line (start -5.75 -4.75) (end -5.75 4.75) (layer F.CrtYd) (width 0.05))
  (fp_line (start 5.75 -4.75) (end 5.75 4.75) (layer F.CrtYd) (width 0.05))
  (fp_line (start -5.75 -4.75) (end 5.75 -4.75) (layer F.CrtYd) (width 0.05))
  (fp_line (start -5.75 4.75) (end 5.75 4.75) (layer F.CrtYd) (width 0.05))
  (fp_text user %R (at 0 -2) (layer F.Fab)
    (effects (font (size 1 1) (thickness 0.15)))
  )
  (pad 1 smd rect (at 0 -3.95) (size 7.97 1.1) (layers F.Cu F.Paste F.Mask))
  (pad 4 smd rect (at -4.95 2.45) (size 1.1 1.1) (layers F.Cu F.Paste F.Mask))
  (pad 3 smd rect (at -4.95 3.95) (size 1.1 1.1) (layers F.Cu F.Paste F.Mask))
  (pad 4 smd rect (at 4.95 2.45) (size 1.1 1.1) (layers F.Cu F.Paste F.Mask))
  (pad 3 smd rect (at 4.95 3.95) (size 1.1 1.1) (layers F.Cu F.Paste F.Mask))
  (pad 2 smd custom (at 0 1.85) (size 7.97 5.27) (layers F.Cu F.Paste F.Mask)
    (zone_connect 2)
    (options (clearance outline) (anchor rect))
    (primitives
      (gr_poly (pts
         (xy -3.99 2.64) (xy 3.99 2.64) (xy 3.99 -0.36) (xy 5.5 -0.36) (xy 5.5 -2.64)
         (xy -5.5 -2.64) (xy -5.5 -0.36) (xy -3.99 -0.36)) (width 0.1))
    ))
  (model ${MYLIB}/packages3d/Transistor_GaN_GS66516B.STEP
    (offset (xyz -4.55 -5.4 -8.1))
    (scale (xyz 1 1 1))
    (rotate (xyz 0 0 0))
  )
)